Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Author

Campanella, Humberto ; Cabruja, Enric ; Montserrat, Josep ; Uranga, Arantxa ; Barniol, Nuria ; Esteve, Jaume

Author_Institution

Univ. Autonoma de Barcelona, Barcelona

Volume

29

Issue

1

fYear

2008

Firstpage

28

Lastpage

30

Abstract

A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator´s structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.

Keywords

CMOS integrated circuits; UHF integrated circuits; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; thin film devices; 3D structure; CMOS substrate; FBAR; Wafer-level transfer; conducting posts; frequency 2.4 GHz; resonant frequency; thin-film bulk acoustic wave resonator; Acoustic waves; CMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Film bulk acoustic resonators; Integrated circuit interconnections; Monolithic integrated circuits; Substrates; Transistors; Acoustic resonators; bulk acoustic wave devices; film bulk acoustic wave resonator (FBAR); heterogeneous CMOS integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.910751

Filename

4408717