• DocumentCode
    1019972
  • Title

    Current dependence of forward delay time of bipolar transistors

  • Author

    H¿¿bert, F. ; Roulston, D.J.

  • Author_Institution
    University of Waterloo, Electrical Engineering Department, Waterloo, Canada
  • Volume
    22
  • Issue
    3
  • fYear
    1986
  • Firstpage
    126
  • Lastpage
    127
  • Abstract
    The modelling of the high current falloff of the transition frequency f1 of bipolar transistors, relies on the definition of a current-dependent delay time. This current dependence of the forward delay time Tf (normal active mode), as expressed in some computer-aided design programs, is considered in the letter.
  • Keywords
    bipolar transistors; delays; semiconductor device models; bipolar transistors; computer-aided design; current dependence; forward delay time; high current falloff; modelling; transition frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860088
  • Filename
    4256272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019972