Title :
Current dependence of forward delay time of bipolar transistors
Author :
H¿¿bert, F. ; Roulston, D.J.
Author_Institution :
University of Waterloo, Electrical Engineering Department, Waterloo, Canada
Abstract :
The modelling of the high current falloff of the transition frequency f1 of bipolar transistors, relies on the definition of a current-dependent delay time. This current dependence of the forward delay time Tf (normal active mode), as expressed in some computer-aided design programs, is considered in the letter.
Keywords :
bipolar transistors; delays; semiconductor device models; bipolar transistors; computer-aided design; current dependence; forward delay time; high current falloff; modelling; transition frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860088
