• DocumentCode
    1020000
  • Title

    Hot-electron injection by graded AlxGa1-xAs

  • Author

    Long, A.P. ; Beaton, P.H. ; Kelly, Michael J. ; Kerr, T.M.

  • Author_Institution
    GEC Research Limited, Hirst Research Centre, Wembley, UK
  • Volume
    22
  • Issue
    3
  • fYear
    1986
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    Triangular barriers of AlxGa1-xAs are used as hot-electron injectors. The AlxGa1-xAs, is linearly graded from x=0 to 0.2 or 0.3 over distances of order 500 Å to provide barriers in the range 200 to 300 meV. In the present application the barrier forms the injector of a hot-electron spectrometer.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; semiconductor diodes; AlxGa1-xAs triangular barriers; III-V semiconductor; graded gap diodes; hot-electron injectors; hot-electron spectrometer; linear grading; planar doped barrier diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860091
  • Filename
    4256275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020000