Title :
Obtaining isothermal data for HBT
Author :
Frégonése, S. ; Zimmer, T. ; Mnif, H. ; Baureis, P. ; Maneux, C.
Author_Institution :
Lab. de Microelectronique IXL, Univ. of Bordeaux, Talence, France
fDate :
7/1/2004 12:00:00 AM
Abstract :
A new measurement method to obtain isothermal electrical characteristics is presented. Heterojunction bipolar transistor (HBT) dc and S-parameter measurements are performed for different chuck temperatures. Knowing the thermal impedance of the device, all the isothermal dc and ac data can be determined. The effectiveness of the method is highlighted by comparing the results with a pulsed measurement system. This new method can be applied with standard measurement equipment.
Keywords :
S-parameters; heterojunction bipolar transistors; semiconductor device measurement; thermal resistance measurement; HBT; S-parameter measurement; chuck temperatures; dc measurement; device thermal impedance; heterojunction bipolar transistor; isothermal data; isothermal electrical characteristics; measurement equipment; measurement method; pulsed measurement system; self-heating; Electric variables; Electric variables measurement; Heterojunction bipolar transistors; Impedance; Isothermal processes; Measurement standards; Performance evaluation; Pulse measurements; Scattering parameters; Temperature; HBT; Heterojunction bipolar transistor; isothermal; self-heating; thermal; transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.830636
