Title :
Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer Layer
Author :
Lin, Cheng-Kuo ; Wu, Jing-Chang ; Wang, Wen-Kai ; Chan, Yi-Jen ; Wu, Jenq-Shinn ; Pan, Yung-Chung ; Tsai, Chung-Chih ; Lai, Jiun-Tsuen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
7/1/2004 12:00:00 AM
Abstract :
We have developed the 1-μm gate-length devices of In0.65Ga0.65As pseudomorphic channel (PC) on the In0.5Al0.5As metamorphic buffer layer to improve the device performance, as compared with the In0.5Ga0.5As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1.8×107 cm/s to 2.3×107 cm/s by this In0.65Ga0.35As PC.
Keywords :
III-V semiconductors; indium compounds; semiconductor device measurement; semiconductor growth; 1 micron; 22 to 31 GHz; 42 to 58 GHz; InAlAs; InGaAs; RF current gain cut-off frequency; dc maximum; delay times; device performance; drain-to-source current; electron effective velocity; gate-length devices; metamorphic buffer layer; oscillation frequency; pseudomorphic channel; transconductance; BiCMOS integrated circuits; Bipolar transistors; Buffer layers; Electrons; Isolation technology; Isothermal processes; Parameter extraction; Pulse measurements; Radio frequency; Thermal resistance; Effective electron velocity; PC; metamorphic buffer; pseudomorphic channel;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829858
