Title :
High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
Author :
Bowers, John E. ; SRIVASTAVA, ANURAG K. ; Burrus, C.A. ; Dewinter, M.A. ; Pollack, M.A. ; Zyskind, J.L.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 2.3 μm are described. The impulse response is 160 ps FWHM at -10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium antimonide; indium compounds; photodetectors; photodiodes; GaInAsSb/GaSb PIN photodetectors; PIN mesa photodiodes; external quantum efficiency; impulse response; pseudorandom modulation; wavelength 2.3 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860096
