DocumentCode
1020063
Title
High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
Author
Bowers, John E. ; SRIVASTAVA, ANURAG K. ; Burrus, C.A. ; Dewinter, M.A. ; Pollack, M.A. ; Zyskind, J.L.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
22
Issue
3
fYear
1986
Firstpage
137
Lastpage
138
Abstract
Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 2.3 μm are described. The impulse response is 160 ps FWHM at -10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium antimonide; indium compounds; photodetectors; photodiodes; GaInAsSb/GaSb PIN photodetectors; PIN mesa photodiodes; external quantum efficiency; impulse response; pseudorandom modulation; wavelength 2.3 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860096
Filename
4256280
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