RTS Noise Characterization in Flash Cells

Author

Li, Sing-Rong ; McMahon, William ; Lu, Yin-Lung R. ; Lee, Yung-Huei

Author_Institution

Intel Corp., Santa Clara

Volume

29

Issue

1

fYear

2008

Firstpage

106

Lastpage

108

Abstract

A method is presented for using noise spectroscopy to efficiently characterize random telegraph signal (RTS) in flash cells, in particular allowing the determination of oxide depth of the traps from the gate voltage dependence of the frequency spectrum of the trap. The RTS traps are not uniformly distributed in nitrided oxides, and increased nitridation of the tunneling oxide results in larger RTS specifically because of the proximity of the additional nitrogen to the substrate. The various effects of program/erase cycling on individual RTS related traps are qualitatively analyzed.

Keywords

flash memories; random noise; semiconductor device noise; spectroscopy; RTS noise characterization; flash cells; frequency spectrum; gate voltage dependence; nitrided oxides; noise spectroscopy; oxide depth; program-erase cycling; random telegraph signal; tunneling oxide; 1f noise; Electron traps; Flash memory; Frequency domain analysis; Manufacturing; Nitrogen; SONOS devices; Spectroscopy; Telegraphy; Voltage; Flash memory; flicker noise; nitrogen; noise spectroscopy; oxide trap; random telegraph signal (RTS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.910776

Filename

4408739