DocumentCode :
1020224
Title :
The insulated-gate field-effect transistor
Author :
Heiman, F.P.
Volume :
10
Issue :
2
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
104
Lastpage :
104
Keywords :
Conductive films; Electrodes; FETs; Insulation; Laboratories; Logic arrays; Silicon; Substrates; Switches; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1963.15127
Filename :
1473430
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1020224
