Title :
Forming Process Investigation of Cux O Memory Films
Author :
Lv, H.B. ; Yin, M. ; Song, Y.L. ; Fu, X.F. ; Tang, L. ; Zhou, P. ; Zhao, C.H. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.
Author_Institution :
Fudan Univ., Shanghai
Abstract :
The forming process, which is the first transition from fresh state to low resistance state, was investigated in CuxO memory films prepared by plasma-induced oxidation. X-ray photoelectron spectroscopy investigation of surface chemical bonds of CuxO films and Auger electron spectroscopy depth spectra show that the formation of a highly resistive CuO layer on the CuxO surface is the main reason for the requirement of a large forming voltage. After selectively deoxidizing the CuO into Cu2O, the need for the "forming" process disappears.
Keywords :
Auger electron spectra; X-ray photoelectron spectra; bonds (chemical); copper compounds; forming processes; oxidation; plasma materials processing; random-access storage; semiconductor thin films; Auger electron spectroscopy depth spectra; CuO; X-ray photoelectron spectroscopy; forming process; memory films; plasma-induced oxidation; surface chemical bonds; Atomic force microscopy; Electrodes; Electrons; Oxidation; Plasmas; Semiconductor films; Semiconductor materials; Spectroscopy; Surface resistance; Voltage; $hbox{Cu}_{x}hbox{O}$; forming process; plasma-induced oxidation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.911619
