Title :
A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT
Author :
Saito, Wataru ; Nitta, Tomohiro ; Kakiuchi, Yorito ; Saito, Yasunobu ; Tsuda, Kunio ; Omura, Ichiro ; Yamaguchi, Masakazu
Author_Institution :
Semicond. Co., Kawasaki
Abstract :
A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.
Keywords :
III-V semiconductors; gallium compounds; power HEMT; power semiconductor switches; switching convertors; wide band gap semiconductors; GaN; boost converter operation; current 4.4 A; current collapse phenomena; drain peak voltage; dual field-plate structure; dynamic on-resistance; efficiency 94.2 percent; frequency 1 MHz; high-voltage HEMT; power 122 W; power efficiency; power electronic applications; switching device; voltage 940 V; Aluminum gallium nitride; Breakdown voltage; Circuits; Electron mobility; Gallium nitride; HEMTs; Power electronics; Power generation; Switching converters; Switching frequency; GaN; HEMT; high voltage; power semiconductor device;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.910796
