Title :
Resistive Coupling Efficiency Criterion for Evaluating Substrate Shielding Structures of Transformers
Author :
Shi, Jinglin ; Yong Zhong Xiong ; Brinkhoff, Mes ; Issaoun, Ammar ; Lin, Fujiang
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
This letter presents a new way to evaluate the transformer substrate effect by computing its resistive coupling efficiency coefficient etaKr. To assess etaKr, a set of transformers with and without shielding structures was fabricated using standard 0.18-mum CMOS process. The resistive coupling factor etaKr and efficiency etaKr were extracted. It was found that substrate and shielding effects are better quantified with etaKr than with Gmax and S parameters. The larger the relative shielding dimensions, the higher the etaKr is. With etaKr as a figure of merit, we see clearly that a large 3-D patterned floating shield improves transformer performance more than a 2-D one. It was also found that shielding efficiency is correlated with shielding structure dimensions and that the performance of shielded transformers is less sensitive to temperature variations.
Keywords :
CMOS integrated circuits; S-parameters; shielding; transformers; 3D patterned floating shield; CMOS process; S parameters; coupling efficiency criterion; resistive coupling efficiency criterion; size 0.18 mum; substrate shielding structures; transformers substrate; CMOS process; Coils; Coupling circuits; Frequency; Mutual coupling; Radiofrequency integrated circuits; Scattering parameters; Silicon; Substrates; Transformers; CMOS; maximum power transfer gain $(G_{ max})$; patterned floating shields (PFSs); patterned ground shields (PGSs); resistive coupling efficiency $(eta_{rm Kr})$ ; resistive coupling factor $(K_{r})$ ; transformer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.910780