Title :
1.3 mu m distributed feedback laser diode with grating accurately controlled by new fabrication technique
Author :
Takemoto, Ayumi ; Ohkura, Y. ; Kimura, Tomohiro ; Yoshida, Norihiro ; Kakimoto, Shinji ; Susaki, W.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Control of coupling constant kappa L is a very significant technique for single longitudinal mode semiconductor laser diodes with a grating, kappa L of GaInAsP/InP distributed feedback laser diodes has been accurately controlled by an MOCVD technique and introduction of a barrier layer.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser modes; laser transitions; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; GaInAsP-InP; III-V semiconductors; MOCVD technique; barrier layer; coupling constant; distributed feedback laser diode; epitaxial growth; fabrication technique; grating; integrated optics; semiconductor laser; single longitudinal mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890157
