Title :
IC-compatible 45 mW Ka-band GaAs transferred-electron oscillator
Author :
Scheiber, H. ; Lubke, K. ; Diskus, C. ; Thim, H.
Author_Institution :
Inst. fur Mikroelektron., Linz Univ., Austria
Abstract :
The performance of a planar field effect controlled transferred electron oscillator has been significantly improved by reducing the length of the low field regions near drain and source. 45 mW with 4.3% efficiency at 28.4 GHz and 24 mW with 3.2% at 37.4 GHz have been obtained, which is a factor of 4.5 times larger than was obtained a year ago.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave oscillators; 24 to 45 mW; 28.4 to 37.4 GHz; 3.2 to 4.3 percent; EHF; GaAs; IC-compatible; Ka-band; MM-wave type; MMIC compatible design; SHF; TEO; field effect controlled; microwave oscillator; millimetre wave operation; planar type; transferred-electron oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890159
