• DocumentCode
    1020479
  • Title

    Heavily Si-doped InGaAs lattice-matched to InP grown by MBE

  • Author

    Fujii, T. ; Inata, T. ; Ishii, K. ; Hiyamizu, S.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    Si-doped InxGa1-xAs layers (x = 0.53) with the highest electron concentrations of 5.0 and 6.1 × 1019 cm-3 have been achieved with the use of low growth temperatures (420 and 370°C) for MBE. Nonalloyed Cr/Au ohmic contacts on these heavily doped InGaAs layers exhibited specific contact resistance as low as 1.7 × 10-8 ¿cm2.
  • Keywords
    III-V semiconductors; chromium; gallium arsenide; gold; heavily doped semiconductors; indium compounds; molecular beam epitaxial growth; ohmic contacts; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; silicon; 370°C; 420 degrees C; Cr/Au ohmic contacts; III-V semiconductors; In0.53Ga0.47As:Si; InxGa1-xAs layers; MBE; contact resistance; electron concentrations; heavily doped InGaAs; low growth temperatures; molecular beam epitaxy; nonalloyed contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860133
  • Filename
    4256320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020479