Title :
Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor
Author :
Decoster, D. ; Vilcot, J.P. ; Constant, M. ; Ramdani, J. ; Verriele, H. ; Vanbremeersch, J.
Author_Institution :
Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, UA CNRS 287, Villeneuve d´Ascq, France
Abstract :
A planar monolithic integrated photoreceiver suitable for 0.8 ¿m-wavelength optical communication systems has been realised. It consists of a GaAs photoconductor associated with a GaAs FET. The steady state and dynamic gains and the noise properties of the photoconductor and of the integrated circuit have been investigated.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; photoconducting devices; receivers; 0.8 micron wavelength; GaAs FET; GaAs photoconductor; IC; III-V semiconductors; dynamic gains; fibre optic communications; field-effect transistor; integrated optoelectronics; noise properties; optical communication systems; photoreceiver; planar monolithic integration; steady-state gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860135
