Discretization of flux densities in device simulations using optimum artificial diffusivity

Author

Tang, Ting-wei ; Ieong, Mei-Kei

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

14

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

1309

Lastpage

1315

Abstract

The discretization scheme for the current density and the energy flux density has been revisited from a numerical diffusion point of view. A general discretization scheme for both flux densities is provided using the optimum artificial diffusivity. This formulation is equivalent to that of Scharfetter and Gummel in most cases but is numerically more transparent. It has the advantage that one formula applies to all and is not dependent on a particular form of transport coefficient. Application of this scheme to a two-dimensional simulation of MOSFETs is included

Keywords

MOSFET; convergence of numerical methods; diffusion; semiconductor device models; MOSFETs; current density; device simulations; discretization scheme; energy flux density; numerical diffusion; optimum artificial diffusivity; transport coefficient; two-dimensional simulation; Computational modeling; Current density; Differential equations; Electrons; High definition video; Hydrodynamics; Nonlinear equations; Semiconductor devices; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.469658

Filename

469658