Title :
Novel electro-optic modulation effect at 10 mu m wavelength in GaAs/AlGaAs quantum wells
Author :
Kane, Michael J. ; Emeny, M.T. ; Apsley, N. ; Whitehouse, C.R.
Author_Institution :
R. Signals & Radar Establ., Malvern, UK
Abstract :
A novel method of controlling the intersubband optical absorption of a quantum well system is reported. The absorption is tuned to 10 mu m wavelength by choosing the appropriate well width and its intensity is modulated by using a Schottky gate to control the carrier density in the quantum wells.
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; carrier density; electro-optical effects; gallium arsenide; light absorption; optical modulation; optoelectronic devices; semiconductor epitaxial layers; semiconductor quantum wells; 10 micron; GaAs-AlGaAs; III-V semiconductors; MBE; SQW; Schottky gate; carrier density control; electro-optic modulation effect; intersubband optical absorption; quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890164
