Electrical characterisation of epitaxially overgrown Si in Si<111>/CoSi2/Si metal base transistor

Author

Delage, S. ; Badoz, P.A. ; Rosencher, E. ; d´Avitaya, F. Arnaud

Author_Institution

Centre National d´Etudes des TÃ©lÃ©communications/CNS, Meylan, France

Volume

22

Issue

4

fYear

1986

Firstpage

207

Lastpage

209

Abstract

Epitaxial Si<111>/CoSi2/Si heterostructures have been grown using molecular beam epitaxy (MBE) apparatus with the overgrown Si layer doped by Sb coevaporation. Electrical characteristics of the top CoSi2/Si epitaxial Schottky barriers are presented. Current/voltage (I/V), capacitance/voltage (C/V) characteristics and deep level transient spectra (DLTS) show that the overgrown Si material is deviceworthy. Furthermore, transconductance measurements between the emitter and collector of the metal base transistor (MBT) indicate that the high Si quality is obtained with a negligible pinhole density in the base. Measurements of the current gain Â¿ in the MBT confirm a value of the CoSi2 ballistic mean free path of 90 Ã… Â± 20 Ã….

Keywords

Schottky effect; bipolar transistors; cobalt compounds; deep level transient spectroscopy; elemental semiconductors; molecular beam epitaxial growth; p-n heterojunctions; silicon; C/V characteristics; CoSi2/Si epitaxial Schottky barriers; DLTS; I/V characteristics; MBE; Sb coevaporation; Sb dopant; Si<111>/CoSi2/Si heterostructures; Si(111) layer; Si/CoSi2/Si; Si:Sb; current gain; deep level transient spectra; electrical characterisation; epitaxially overgrown Si; metal base transistor; molecular beam epitaxy; transconductance measurements;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860145

Filename

4256333