Leakage Suppression of Low-Voltage Transient Voltage Suppressor

Author

Dai, Sheng-Huei ; Lin, Chrong-Jung ; King, Ya-Chin

Author_Institution

Nat. Tsing-Hua Univ., Hsinchu

Volume

55

Issue

1

fYear

2008

Firstpage

206

Lastpage

210

Abstract

In modern electronics, as the supply voltage decreases, the protection devices for low-voltage application are gaining more importance. In this paper, two types of diode-based transient voltage suppressors are proposed for protection against electrical overstress and electrostatic discharges. The modified diodes show lower leakage under low-voltage and sharp I-V transition after breakdown by only a few modifications on the fabrication process.

Keywords

electrostatic discharge; leakage currents; low-power electronics; power semiconductor diodes; power supplies to apparatus; protection; semiconductor device breakdown; transients; voltage control; ESD; I-V transition; electrical overstress; electrostatic discharges; fabrication process; leakage currents; leakage suppression; low-voltage diode-based transient voltage suppressor; protection devices; Breakdown voltage; Diodes; Earth Observing System; Electric breakdown; Electrostatic discharge; Fabrication; Ion implantation; P-n junctions; Protection; Silicon; Electrical overstress (EOS); electrostatic discharges (ESDs); leakage currents; transient voltage suppressor (TVS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.911042

Filename

4408780