Title :
High-detectivity InAs0.85Sb0.15/InAs infra-red (1.8-4.8 μm) detectors
Author :
Mohammed, Kadri ; Capasso, Federico ; Logan, R.A. ; van der Ziel, J.P. ; Hutchinson, A.L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We report the operation of broadband InAs0.85Sb0.15/ pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch (≅1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) = (1.5 × 1011 cm(Hz)1/2/W; D* (200 K) = 2 × 1010 cm(Hz)1/2/W at λ = 3.5 μm) and peak external quantum efficiencies of 40%.
Keywords :
III-V semiconductors; indium antimonide; infrared detectors; liquid phase epitaxial growth; photodetectors; photodiodes; 1.8 micron to 4.8 micron range; III-V semiconductors; IR detectors; InAs substrate; InAs0.85Sb0.15/InAs; LPE; broadband; high detectivity type; infrared type; liquid phase epitaxy; p- n junction photodetectors; photodiodes; zero bias detectivities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860150
