Transient characteristics of alloy junction transistors using a generalized charge storage model

A generalized charge storage model for characterizing the transient behavior of asymmetrical alloy junction transistor bases is presented. The model enables one to study quantitatively not only the various transient waveforms encounted in switching from one region to another under diversified circuit conditions, but also provides a means for evaluating the transient parameters of the device analytically from a knowledge of the base geometry, surface recombination velocity of the free base surface and bulk lifetime of the base semiconductor. A sample calculation is presented illustrating the use of the generalized charge storage model.