• DocumentCode
    1020654
  • Title

    High-power AlGaAs laser with a thin tapered-thickness active layer

  • Author

    Murakami, T. ; Ohtaki, K. ; Matsubara, H. ; Yamawaki, T. ; Saito, H. ; Isshiki, K. ; Kokubo, Y. ; Kumabe, H. ; Susaki, W.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    A laser whose active layer is thinner near the mirror facet than the inner region is fabricated. Lasers with narrow beam divergence perpendicular to the junction, as narrow as 10°-20°, are obtained with little increase of threshold current. For lasers emitting at 780 nm, stable 30 mW operation at 50°C has been confirmed without obvious degradation over 4000 h.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; liquid phase epitaxial growth; semiconductor junction lasers; 30 mW operation; 50°C; 780 nm; AlGaAs laser; LPE; liquid phase epitaxy; ridged substrate; semiconductor lasers; tapered-thickness active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860151
  • Filename
    4256339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020654