Title :
The small-signal inductive effect in a long P-I-N diode
Author :
Nordman, J.E. ; Greiner, R.A.
Author_Institution :
University of Wisconsin, Madison, Wis.
fDate :
5/1/1963 12:00:00 AM
Abstract :
The small-signal impedance of the forward-biased p-i-n diode has been calculated. It is found that, for a certain range of bias voltages, the impedance of the intrinsic region can be approximated by a parallel combination of resistance and inductance. If the intrinsic region is sufficiently long the junction impedance becomes negligible in comparision to the i-region impedance and a high Q inductor results at low frequencies. Values of Q up to 18 are calculated.
Keywords :
Conductivity; Doping; Frequency; Impedance; Inductance; Inductors; P-i-n diodes; Semiconductor diodes; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15171
