• DocumentCode
    1020662
  • Title

    Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions

  • Author

    Hill, Andrew J. ; Ladbrooke, P.H.

  • Author_Institution
    GEC, Hirst Research Centre, Wembley, UK
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • Firstpage
    218
  • Lastpage
    219
  • Abstract
    The conduction-band discontinuity dependence on aluminium mole fraction for GaAs/AlGaAs heterojunctions is discussed and is shown to have a maximum value at a mole fraction of approximately 0.45.
  • Keywords
    III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; conduction bands; gallium arsenide; p-n heterojunctions; Al mole fraction; GaAs/AlGaAs heterojunctions; III-V semiconductors; conduction-band discontinuity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860152
  • Filename
    4256340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020662