Title :
Very fine corrugations formed on InP by wet chemical etching and electron beam lithography
Author :
Inamura, E. ; Tamura, Shinji ; Miyamoto, Yutaka ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution :
Tokyo Inst. of Technol., Japan
Abstract :
Corrugations of 70 nm pitch and 100 nm depth were formed on InP using electron beam lithography and wet chemical etching giving the material selective and anisotropic qualities. For this purpose, a thin GaInAs layer grown by MOVPE was used as an etching mask to suppress the undercut etching so as to form very fine structures.
Keywords :
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; masks; semiconductor epitaxial layers; semiconductor technology; vapour phase epitaxial growth; 100 nm; 70 nm; III-V semiconductors; InP; InP-GaInAs; MOVPE grown GaInAs mask; electron beam lithography; etching mask; fine corrugations; undercutting suppression; wet chemical etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890169
