Title :
11 W quasi-CW monolithic laser diode arrays
Author :
Harnagel, G.L. ; Cross, P.S. ; Scifres, D.R. ; Worland, D.P.
Author_Institution :
Spectra Diode Laboratories, San Jose, USA
Abstract :
An optical power of 11 W from one facet has been obtained from a 1 cm integrated GaAlAs laser array for 150 ¿s is pulse widths (quasi-CW operation). The array consists of 20 tenstripe lasers spaced along the bar, employing about 20% of the facet length for active laser emission.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; 11 W optical output power; GaAlAs; III-V semiconductors; integrated optoelectronics; monolithic laser diode arrays; quasi-CW operation; semiconductor lasers; ten-stripe lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860159
