DocumentCode :
1020742
Title :
Narrow-linewidth AlGaAs/GaAs multiple quantum well distributed feedback lasers
Author :
Kojima, Keisuke ; Hara, Kentaro ; Kameya, M. ; Kyuma, K.
Author_Institution :
Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
25
Issue :
3
fYear :
1989
Firstpage :
240
Lastpage :
241
Abstract :
Long-cavity AlGaAs/GaAs multiple quantum well distributed feedback (DFB) lasers were fabricated. The minimum linewidth was as narrow as 1.5 MHz, which is the narrowest value yet reported for AlGaAs/GaAs DFB and distributed Bragg reflector (DBR) lasers. The measurement of the linewidth enhancement factor alpha is also reported.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; laser cavity resonators; optical waveguides; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; 1.5 MHz; AlGaAs-GaAs; DFB lasers; III-V semiconductors; distributed feedback lasers; linewidth enhancement factor; long cavity type; measurement; minimum linewidth; multiple quantum well; narrow linewidth; ridged waveguide; second order gratings; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890170
Filename :
130890
Link To Document :
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