Title :
1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure
Author :
Cha, I. ; Kitamura, M. ; Mito, I.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
A GaInAsP-InP 1.5 mu m band travelling-wave optical amplifiers (TWAs) with antireflection coated window facet structure have been developed. 0.07% average facet reflectivity and 20 dB signal gain with 1 dB spectral gain ripple was achieved. As low as 3*10-5 reflectivity was estimated for the window facet.
Keywords :
III-V semiconductors; amplifiers; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; 20 dB; GaInAsP-InP; III-V semiconductors; TWAs; antireflection coated; optical communication; semiconductor lasers; semiconductor optical amplifiers; travelling-wave; window facet structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890171
