• DocumentCode
    1020753
  • Title

    1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure

  • Author

    Cha, I. ; Kitamura, M. ; Mito, I.

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    242
  • Lastpage
    243
  • Abstract
    A GaInAsP-InP 1.5 mu m band travelling-wave optical amplifiers (TWAs) with antireflection coated window facet structure have been developed. 0.07% average facet reflectivity and 20 dB signal gain with 1 dB spectral gain ripple was achieved. As low as 3*10-5 reflectivity was estimated for the window facet.
  • Keywords
    III-V semiconductors; amplifiers; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; 20 dB; GaInAsP-InP; III-V semiconductors; TWAs; antireflection coated; optical communication; semiconductor lasers; semiconductor optical amplifiers; travelling-wave; window facet structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890171
  • Filename
    130891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020753