• DocumentCode
    1020759
  • Title

    InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition

  • Author

    Dupuis, R.D. ; Velebir, J.R. ; Campbell, J.C. ; Qua, G.J.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    22
  • Issue
    5
  • fYear
    1986
  • Firstpage
    235
  • Lastpage
    236
  • Abstract
    InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, `grading¿ and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (¿ 32 nA at 90% breakdown) and high-speed pulse response (¿ 100 ps FWHM).
  • Keywords
    III-V semiconductors; avalanche photodiodes; chemical vapour deposition; optical communication equipment; semiconductor growth; vapour phase epitaxial growth; APDs; CVD; III-V semiconductors; InP/InGaAsP/InGaAs; MOCVD; VPE; avalanche photodiodes; epitaxial growth; high-speed pulse response; low dark current; metalorganic chemical vapour deposition; multiplication regions; optical communication equipment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860161
  • Filename
    4256350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020759