Title :
Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser
Author :
Vawter, G. Allen ; Myers, D.R. ; Brennan, T.M. ; Hammons, B.E. ; Hohimer, J.P.
Author_Institution :
Sandia Nat. Labs., Albuqueque, NM, USA
Abstract :
Record low-threshold current density operation of a single-strained-quantum-well graded-index separate-confinement heterostructure GaInAs-AlGaAs laser has been obtained. The device was grown by molecular-beam epitaxy on a GaAs substrate and uses a proton implant stripe geometry to achieve a threshold current density of 1.3 kA/cm2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; molecular beam epitaxial growth; optical waveguides; semiconductor junction lasers; semiconductor quantum wells; GaAs substrate; GaInAs-AlGaAs laser; III-V semiconductors; MBE; graded-index; heterostructure laser; low-threshold; molecular-beam epitaxy; proton implant stripe geometry; semiconductor lasers; separate-confinement; single-strained-quantum-well; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890172
