Title :
Material evolution and gradual degradation in semiconductor lasers and light emitting diodes
Author :
Salzman, J. ; Khait, Y.L. ; Beserman, R.
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
The injection of a nonequilibrium electron-hole plasma increases the probability of structural changes in the semiconductor material and reduces the effective activation energy for defect formation and migration. The kinetic theory of short-lived large energy fluctuations of atoms is applied to link lasers and LED gradual degradation to material parameters. A comparison between GaAs and InP based devices is made based on diffusion experimental data.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; reliability; semiconductor junction lasers; GaAs; III-V semiconductors; InP; LED; activation energy; defect formation; defect migration; diffusion experimental data; gradual degradation; kinetic theory; light emitting diodes; link lasers; long-term reliability; material degradation; nonequilibrium electron-hole plasma; semiconductor lasers; short-lived large energy fluctuations; structural changes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890173
