DocumentCode :
1020817
Title :
MOS transconductors and integrators with high linearity
Author :
Tsividis, Y. ; Czarnul, Z. ; Fang, S.C.
Author_Institution :
Columbia University, Department of Electrical Engineering and Center for Telecommunications Research, New York, USA
Volume :
22
Issue :
5
fYear :
1986
Firstpage :
245
Lastpage :
246
Abstract :
MOS transconductors are discussed in which the transistors determining the transconductance do not carry bias current, operate with large gate-source voltage, and are signal-driven in such a way that their nonlinearities are eliminated. An integrator implemented using one of the proposed circuits exhibited measured total harmonic distortion of less than 0.1% for differential input signals of 2.5 V p-p, and less than 1% for 5 V p-p.
Keywords :
active networks; field effect integrated circuits; integrating circuits; MOS transconductors; active networks; integrators; large gate-source voltage; monolithic IC; nonlinearity elimination; signal-driven;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860168
Filename :
4256357
Link To Document :
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