Title :
Capacitance Simulations and Measurements of 3D Pixel Sensors Under 55 MeV Proton Exposure
Author :
Metcalfe, Jessica E. ; Gorelov, Igor ; Hoeferkamp, Martin ; Seidel, Sally
Abstract :
3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n- and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.
Keywords :
capacitance measurement; electrodes; nuclear electronics; position sensitive particle detectors; proton effects; readout electronics; silicon radiation detectors; 3D pixel sensors; capacitance measurements; electron volt energy 55 MeV; high energy physics; inter-electrode capacitance; n-type columns; p-type columns; proton irradiation effects; radiation tolerance; readout electronics; silicon detector; spatial resolution; Capacitance measurement; Capacitive sensors; Detectors; Electrodes; Frequency; Protons; Sensor phenomena and characterization; Silicon; Spatial resolution; Testing; 3D; capacitance; irradiation; pixel; silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2004461
