Title :
Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET
Author :
Thornton, Trevor J. ; Pepper, Matthew ; Ahmed, Hameeza ; Andrews, D. ; Davies, G.J.
Author_Institution :
Cavendish Laboratory, Cambridge, UK
Abstract :
The low-temperature characteristics of a depleted GaAs AlGaAs heterojunction FET with gate length of 1000 Å and width 10 ¿m show that the current is initially space-charge- limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; field effect transistors; gallium arsenide; hot carriers; p-n heterojunctions; space-charge-limited conduction; GaAs/AlGaAs; MBE; depleted region; electron-phonon interactions; fine-gate type; heterojunction FET; hot electrons; low-temperature characteristics; optic phonon emission; source-drain bias; space-charge-limited current; velocity saturation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860170
