Title :
Band-structure engineering for low-threshold high-efficiency semiconductor lasers
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
It is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated. The band-structure requirements are discussed generally and might be achieved by alternative methods.
Keywords :
Auger effect; III-V semiconductors; band structure of crystalline semiconductors and insulators; electron-hole recombination; semiconductor junction lasers; semiconductor superlattices; Auger recombination; III-V semiconductors; band-structure; electron-hole recombination reduction; high-efficiency; intervalence band absorption; low-threshold; quantum-well laser; semiconductor lasers; strained-layer superlattice; threshold current-reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860171
