DocumentCode :
1020850
Title :
A study of ohmicity and exclusion in high-low semiconductor junction devices
Author :
Lade, R.W. ; Jordan, A.G.
Author_Institution :
North Carolina State College, Raleigh, N. C.
Volume :
10
Issue :
4
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
268
Lastpage :
277
Abstract :
The purpose of this paper is to describe the terminal properties of a class of high-low conductivity junction devices. In particular, the static forward-bias characteristics of the 
structure are found to be linear at low current densities and a critical current density level is derived, above which the forward-bias volt-ampere characteristics are nonlinear. In reverse bias some nonlinearity is present due to minority carrier exclusion and conditions are given for achieving linearity. Experimental studies show a capacitive effect present due to carrier exclusion and these data are discussed in terms of the present model.
structure are found to be linear at low current densities and a critical current density level is derived, above which the forward-bias volt-ampere characteristics are nonlinear. In reverse bias some nonlinearity is present due to minority carrier exclusion and conditions are given for achieving linearity. Experimental studies show a capacitive effect present due to carrier exclusion and these data are discussed in terms of the present model.Keywords :
Conductivity; Critical current density; Current density; Germanium alloys; Germanium silicon alloys; Linearity; Ohmic contacts; Silicon alloys; Silicon germanium; Space charge;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1963.15189
Filename :
1473492
Link To Document :
