Title :
An expitaxial grown-diffused silicon transistor
Author :
Allen, C.C. ; Runyan, W.R.
fDate :
7/1/1963 12:00:00 AM
Keywords :
Atomic layer deposition; Boron; Charge carrier density; Delay effects; Doping; Impurities; Iron; Silicon; Space vector pulse width modulation; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15195
