DocumentCode
1020986
Title
Improved InP/InGaAs/InP PIN detector response using a transparent conductor contact
Author
Russell, J.L. ; Kellert, F. ; Ehlers, E. ; Monahan, D.
Author_Institution
Hewlett Packard Co., Santa Rosa, CA, USA
Volume
26
Issue
16
fYear
1990
Firstpage
1231
Lastpage
1232
Abstract
The elimination of the spatial variation in the frequency response of large area pin photodetectors is described using indium tin oxide as a transparent contact. The I/V, C/V, and relative frequency response characteristics are reported for devices fabricated with and without the indium tin oxide. The devices have active area diameters of 25.0 and 80.0 mu m. Responsivities were 0.53 and 0.61 A/W for photodetectors with and without the ITO contact, respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; p-i-n diodes; photodiodes; 25 micron; 80 micron; C/V characteristic; I/V characteristic; ITO contact; InP-InGaAs-InP; InSnO; active area diameters; frequency response; large area pin photodetectors; p-i-n photodetector; photodiodes; responsivities; semiconductors; transparent conductor contact; uniform detector response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900793
Filename
130903
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