Title :
High-power GaAlAs window lasers
Author :
Ungar, J. ; Bar-Chaim, N. ; Ury, I.
Author_Institution :
Ortel Corporation, Alhambra, USA
Abstract :
High-power GaAlAs lasers using the large optical cavity buried-heterostructure (LOC-BH) window structure, which provides transverse index guiding in the nonabsorbing facet region, have been fabricated. Threshold currents between 30 and 50 mA and differential quantum efficiencies of 0.85 mW/ mA have been measured. CW and pulsed output powers up to 88 and 372 mW, respectively, have been attained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; CW output; GaAlAs lasers; III-V semiconductors; differential quantum efficiencies; large optical cavity buried-heterostructure; nonabsorbing facet; pulsed output powers; semiconductor junction lasers; transverse index guiding; window structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860192
