• DocumentCode
    1021092
  • Title

    Low resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0.48In0.52As/Ga0.47In0.53As

  • Author

    Capani, P.M. ; Mukherjee, S.D. ; Griem, H.T. ; Rathbun, L. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures Phillips Hall,, Ithaca, USA
  • Volume
    22
  • Issue
    5
  • fYear
    1986
  • Firstpage
    285
  • Lastpage
    286
  • Abstract
    A low-resistance ohmic-contacts metallurgy has been developed for the modulation-doped Al0.48In0.52As/Ga0.47In0.53As structure for MODFET (HEMT) application. The metallurgy involves we sequentially evaporated NiGeAuAgAu layers followed by transient thermal alloy cycles. This resulted in low transfer resistance ~ 0.20 ± 0.05 ¿ mm to the two dimensional electron gas for alloying temperatures from 410° C to 500°C.
  • Keywords
    III-V semiconductors; high electron mobility transistors; metallisation; ohmic contacts; HEMT; MODFET; low-resistance ohmic-contact metallurgy; modulation-doped Al0.48In0.52As/Ga0.47 In0.53As; sequentially evaporated NiGeAuAgAu lasers; transfer resistances; transient thermal alloy cycles; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860196
  • Filename
    4256386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021092