Title :
Low resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0.48In0.52As/Ga0.47In0.53As
Author :
Capani, P.M. ; Mukherjee, S.D. ; Griem, H.T. ; Rathbun, L. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures Phillips Hall,, Ithaca, USA
Abstract :
A low-resistance ohmic-contacts metallurgy has been developed for the modulation-doped Al0.48In0.52As/Ga0.47In0.53As structure for MODFET (HEMT) application. The metallurgy involves we sequentially evaporated NiGeAuAgAu layers followed by transient thermal alloy cycles. This resulted in low transfer resistance ~ 0.20 ± 0.05 ¿ mm to the two dimensional electron gas for alloying temperatures from 410° C to 500°C.
Keywords :
III-V semiconductors; high electron mobility transistors; metallisation; ohmic contacts; HEMT; MODFET; low-resistance ohmic-contact metallurgy; modulation-doped Al0.48In0.52As/Ga0.47 In0.53As; sequentially evaporated NiGeAuAgAu lasers; transfer resistances; transient thermal alloy cycles; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860196
