Title :
Heterostructure bipolar transistor employing carbon-doped base grown with trimethyl-Ga and arsine
Author :
Kuo, T.Y. ; Chiu, T.H. ; Cunningham, John E. ; Goossen, K.W. ; Fonstad, C.G. ; Ren, Fengyuan
Author_Institution :
Dept. of Electr. Eng., MIT, Cambridge, MA, USA
Abstract :
The investigation of an AlGaAs/GaAs HBT in which a heavily carbon doped base is grown by chemical beam epitaxy using trimethyl-Ga is reported. A planar technique which reduces surface recombination has been employed for selectively contacting the base region. A base width of 1000 AA and a high doping level of 7*1019 cm-3 is used. The sheet resistance of the base is less than 100 Omega / Square Operator . This transistor has a maximum current gain of 25 at a current density of 1.3*103 A/cm2.
Keywords :
III-V semiconductors; aluminium compounds; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 1000 A; AlGaAs-GaAs:C; AsH 3; base width; chemical beam epitaxy; current density; current gain; doping level; heterostructure bipolar transistor; planar technique; reduces surface recombination; selectively contacting; semiconductors; sheet resistance; trimethyl-Ga;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900812
