Title :
Non-steady-state photovoltage in crystals with long photoconductivity relaxation times
Author :
Sokolov, I.A. ; Stepanov, S.I.
Author_Institution :
AF Ioffe Phys.-Tech. Inst., Leningrad, USSR
Abstract :
The effect of non-steady-state photovoltage in photoconductive crystals for high excitation frequencies is discussed. The theoretical analysis based on the widely accepted model of a photoconductor with one partially compensated donor level and a finite photoelectron lifetime is in reasonable agreement with the experiments on cubic BSO crystals. Average lifetimes of photocarriers in the samples were estimated to be tau =10-4 s for lambda =442 nm and T=3*10-6 s for lambda =663 nm.
Keywords :
bismuth compounds; crystals; photoconducting materials; photoconductivity; 1E-4 s; 3E-6 s; 442 nm; 663 nm; Bi12SiO20; cubic BSO crystals; finite photoelectron lifetime; high excitation frequencies; lifetimes of photocarriers; long photoconductivity relaxation times; model; nonsteady state photovoltage; photoconductive crystals; photoconductor with one partially compensated donor level;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900821