Title :
Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs
Author :
Morizuka, K. ; Nozu, T. ; Tsuda, K. ; Azuma, M.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; bipolar transistors; digital integrated circuits; gallium arsenide; integrated circuit technology; 17 GHz; DCTL; GaAs/AlGaAs; HBT; Mg implantation; P implantation; collector-top heterojunction bipolar transistors; cutoff frequency; digital ICs; gate delay time; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860216
