DocumentCode
1021458
Title
Deep donor trapping effects on the pulsed characteristics of AlGaAs/GaAs HEMTs
Author
Hofmann, Karl Rudiger ; Kohn, Erhard
Author_Institution
Siemens Research & Technology Laboratories, E. Princeton, USA
Volume
22
Issue
6
fYear
1986
Firstpage
335
Lastpage
337
Abstract
It is demonstrated both by experiments and by numerical model calculations that electron capture/emission on deep Si related donors (`DX centres¿) in the AlGaAs can lead to significant changes of the pulsed transfer characteristic of AlGaAs/GaAs high electron mobility transistors (HEMTs) at room temperature compared with the static case.
Keywords
III-V semiconductors; aluminium compounds; deep levels; electron traps; gallium arsenide; high electron mobility transistors; impurity electron states; AlGaAs/GaAs; DX centres; HEMTs; III-V semiconductors; deep Si related donors; deep donor trapping effects; electron capture/emission; high electron mobility transistors; impurity electron states; model calculations; pulsed transfer characteristic; room temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860230
Filename
4256421
Link To Document