• DocumentCode
    1021477
  • Title

    High-speed high-resolution CMOS voltage comparator

  • Author

    Ng, W.T. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • Firstpage
    338
  • Lastpage
    339
  • Abstract
    A new CMOS voltage comparator circuit capable of resolving 300 ¿V has been designed and implemented using a 5 ¿m CMOS process. Differential signal paths are used to eliminate the residual offset voltage caused by clock feedthrough and the channel charge pumping effect in MOS switches. The regenerative action of the output latch is used to provide high voltage gain and high operating speed. The circuit performance does not depend on any critical device geometries, and consequently the circuit is scalable. If a finer geometry CMOS process were used, still higher resolution and faster operating speed could be expected.
  • Keywords
    CMOS integrated circuits; comparators (circuits); linear integrated circuits; 5 micron process; CMOS voltage comparator; MOS switches; channel charge pumping effect; clock feedthrough; differential signal paths; high operating speed; high voltage gain; high-resolution; linear IC; offset elimination; output latch; regenerative action; residual offset voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860232
  • Filename
    4256423