DocumentCode
1021511
Title
Requirements for modulator-integrated DFB LD´s for penalty-free 2.5-Gb/s transmission
Author
Yamaguchi, Masayuki ; Kato, Tomoaki ; Sasaki, Tatsuya ; Komatsu, Keiro ; Kitamura, Mitsuhiro
Author_Institution
Opto-electron. Res. Lab., NEC Corp., Tsukuba, Japan
Volume
13
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
1948
Lastpage
1954
Abstract
Wavelength chirp of modulator-integrated distributed-feedback laser diodes (DFB LD´s) is governed by device parameters such as the modulator facet reflectivity, isolation resistance, grating coupling factor, and differential gain. We determined values of these parameters necessary for ensuring penalty-free 2.5-Gb/s transmission over at least 80-km of standard fiber. The influences of the device parameters on wavelength chirp behavior and 2.5-Gb/s data transmission performance are investigated using a new method of characterizing wavelength chirp. By transmitting light from the LD while modulating the modulator, we can determine the light intensity fluctuation after the transmission caused by wavelength chirp. This intensity fluctuation ratio (ΔI/I) is used to monitor the wavelength chirp. We use integrated devices which satisfy all these requirements, and which are grown by selective metal-organic vapor phase epitaxy (MOVPE), to demonstrate penalty-free 2.5-Gb/s transmission, even over 120-km of standard fiber
Keywords
chirp modulation; distributed feedback lasers; electro-optical modulation; fluctuations; integrated optics; optical transmitters; reflectivity; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 120 km; 2.5 Gbit/s; MOVPE; data transmission performance; device parameters; differential gain; grating coupling factor; intensity fluctuation ratio; isolation resistance; light intensity fluctuation; modulator facet reflectivity; modulator-integrated DFB LD´s; modulator-integrated distributed-feedback laser diodes; penalty-free 2.5-Gb/s transmission; selective metal-organic vapor phase epitaxy; wavelength chirp; Chirp modulation; Diode lasers; Epitaxial growth; Fluctuations; Gratings; Intensity modulation; Optical coupling; Optical fiber devices; Optical modulation; Reflectivity;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.469742
Filename
469742
Link To Document