DocumentCode :
1021530
Title :
Common emitter breakdown
Author :
Morrison, S. Roy ; Billette, R.
Author_Institution :
Honeywell Research Center, Hopkins, Minn.
Volume :
10
Issue :
6
fYear :
1963
fDate :
11/1/1963 12:00:00 AM
Firstpage :
351
Lastpage :
356
Abstract :
A theory of the current-voltage characteristics with grounded emitter and open base is developed in a first approximation form. The results show the typical negative resistance region characteristic of these 
curves, and the theory indicates the important parameters which control this negative resistance. The containment of the emitter current with subsequent development of "hot spots" on the transistor becomes easily understood. Experimental evidence of the importance of localized breakdown spots in common emitter breakdown is presented.
curves, and the theory indicates the important parameters which control this negative resistance. The containment of the emitter current with subsequent development of "hot spots" on the transistor becomes easily understood. Experimental evidence of the importance of localized breakdown spots in common emitter breakdown is presented.Keywords :
Avalanche breakdown; Capacitance; Current-voltage characteristics; Electric breakdown; Electrons; Packaging; Pins; Sockets; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1963.15258
Filename :
1473561
Link To Document :
