Numerical study of polarisation-selective side-illuminated pin photodetectors grown on InP substrate for hybridisation on silicon platform

Author

Magnin, V. ; Harari, J. ; Decoster, D.

Author_Institution

Inst. d´´Electronique de Microelectronique et de Nanotechnologie, UMR CNRS, Villeneuve d´´Ascq, France

Volume

151

Issue

3

fYear

2004

fDate

6/28/2004 12:00:00 AM

Firstpage

171

Lastpage

176

Abstract

A monolithic polarisation-selective side-illuminated pin photodetector is described using the coupling properties of symmetric and asymmetric slab optical waveguides. First, a basic structure is proposed, analysed and optimised by modal analysis, leading to a computed polarisation ratio of 15.7 dB. Then the symmetric waveguide is replaced by a multimode diluted waveguide optimised by a genetic algorithm coupled to a beam propagation method. This significantly improves the performance of the device and particularly the computed polarisation ratio, which reaches 21 dB. This InP-based photodetector is suitable for hybridisation on a silicon platform and is compatible with 10 Gbit/s operation.

Keywords

genetic algorithms; integrated optics; optical communication equipment; optical design techniques; optical waveguide theory; p-i-n photodiodes; photodetectors; silicon; symmetry; 10 Gbit/s; InP; InP substrate; asymmetric slab optical waveguides; beam propagation method; computed polarisation ratio; coupling properties; genetic algorithm; modal analysis; monolithic polarisation-selective side-illuminated pin photodetector; optical communication systems; polarisation-selective side-illuminated pin photodetectors; silicon platform hybridisation; symmetric slab optical waveguides; symmetric waveguide;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20040389

Filename

1309336