Title :
Polysilicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing
Author :
Chao, H.C. ; Neudeck, G.W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
fDate :
1/6/1994 12:00:00 AM
Abstract :
The thermo-optical effect of a polysilicon Fabry-Perot thermal sensor, deposited in a reduced pressure pancake reactor using dichlorosilane, has been evaluated theoretically and experimentally. The polysilicon deposition rate was much faster than that deposited by the low pressure chemical vapour deposition (LPCVD) technique using silicon
Keywords :
chemical vapour deposition; elemental semiconductors; optical films; optical resonators; optical sensors; silicon; thermo-optical effects; thermometers; CVD; Si; dichlorosilane; pancake reactor; polysilicon Fabry-Perot cavities; polysilicon Fabry-Perot thermal sensor; polysilicon deposition rate; reduced pressure chemical vapour deposition reactor; thermal sensing; thermo-optical effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940050
