• DocumentCode
    1021606
  • Title

    Polysilicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing

  • Author

    Chao, H.C. ; Neudeck, G.W.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
  • Volume
    30
  • Issue
    1
  • fYear
    1994
  • fDate
    1/6/1994 12:00:00 AM
  • Firstpage
    80
  • Lastpage
    81
  • Abstract
    The thermo-optical effect of a polysilicon Fabry-Perot thermal sensor, deposited in a reduced pressure pancake reactor using dichlorosilane, has been evaluated theoretically and experimentally. The polysilicon deposition rate was much faster than that deposited by the low pressure chemical vapour deposition (LPCVD) technique using silicon
  • Keywords
    chemical vapour deposition; elemental semiconductors; optical films; optical resonators; optical sensors; silicon; thermo-optical effects; thermometers; CVD; Si; dichlorosilane; pancake reactor; polysilicon Fabry-Perot cavities; polysilicon Fabry-Perot thermal sensor; polysilicon deposition rate; reduced pressure chemical vapour deposition reactor; thermal sensing; thermo-optical effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940050
  • Filename
    260616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021606