Title :
Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodes
Author :
Trommer, Ralph ; Hoffmann, Lionel
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 ¿m and of 6 ¿s have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; photodiodes; DH photodiodes; InGaAs/InP double-heterostructure photodiodes; lifetime; low-doped InGaAs; material quality; minority-hole diffusion length; planar InGaAs/InP PIN photodiodes; pulse illumination; semiconductors; surface effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860245
